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Journal of Emerging Trends in Engineering and Applied Sciences (JETEAS)


Article Title: The Capacitive Pressure Sensor for High Temperature Application: Design and Fabrication
by Tran Le Thien Thuy; Shuji Tanaka, Masayoshi Esashi and Nguyen Van Hieu

The design, fabrication process and charac-terization of a silicon diaphragm capacitive pressure sensor high temperature application were reported here, which using low-temperature co-fired ceramic substrate. The pressure reference cavity placed inside the senor is hermetically sealed in vacuum especially for high temperature applications to avoid a change of the reference pressure. Capacitance sensing circuits associated with an Impedance Bridge are implemented in order to monitor the change the capacitor with respect to that of the potential. GaN diodes are integrated in capacitance sensing circuits to form low-pass filtering and amplifying devices. The advantage of the integration of the GaN diode offers wide band gap; non-intrinsic at much higher temperature or less demand on cooling, high breakdown field, good electron mobility and thermal conductivity as well as high mechanical and thermal stability.
Keywords: capacitive pressure sensor, fabrication process, anodic bonding, diode GaN
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ISSN: 2141-7016

Editor in Chief.

Prof. Gui Yun Tian
Professor of Sensor Technologies
School of Electrical, Electronic and Computer Engineering
University of Newcastle
United Kingdom



Copyright © Journal of Emerging Trends in Engineering and Applied Sciences 2010