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Journal of Emerging Trends in Engineering and Applied Sciences (JETEAS)


Article Title: The Study of Doping Concentration in ALYGA1-YN Block Layer Based on Multi Quantum Well of 313m LED
by Nguyen Van Hieu and Huynh Hoang Trung

The structure of UVLED with three multi-quantum wells (MQW) of iAlyGa1-yN barrier - iAl0.20Ga0.80N QW - iAlyGa1-yN barrier are studied by the SiLENSe software with various doping concentration of Mg in the block layer. This UVLED is emitted the wavelength of 312 nm for sterilization. The IEQ values was found to be stable with Nd= 5x1018 cm-3. The emitting wavelength of this structure is around 313nm. The components of Aluminum material in the block of AlyGa1-yN layer is test to 45% and 55% to predict the increasing of radiating wavelength over 314nm, which are in good agreement with the recent publication.
Keywords: UVLED, MOCVD, AlGaN, MQWs, sterilization
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ISSN: 2141-7016

Editor in Chief.

Prof. Gui Yun Tian
Professor of Sensor Technologies
School of Electrical, Electronic and Computer Engineering
University of Newcastle
United Kingdom



Copyright © Journal of Emerging Trends in Engineering and Applied Sciences 2010