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Journal of Emerging Trends in Engineering and Applied Sciences (JETEAS)


Article Title: ZnO Nanowire Anti-Reflection Layer Prepared on a Silicon-Based Solar Cell Using Various Growth Concentrations
by Yu-En Wu, and Ting-Jen Hsueh

This study examines the growth of ZnO nanowires (NWs) on a AZO/textured silicon-based photovoltaic device via a hydrothermal method for use as an anti-reflection layer (AR layer). Various processes in the hydrothermal growth of ZnO NWs will be discussed and modified for application on solar cells, A number of factors can be are used to control the length of the nanowires, including the reaction concentration of the chemicals. The NW anti-reflection layer obtained in this work can reduce the reflection of incident light, with levels down to 5% or less for UV light and 10% or less in infrared light. It can also improve the sort-current density. The best results were achieved with 300-nm long ZnO NWs as the AR layer on a 2.5 x 2.5-cm2 area solar cell, with the efficiency (?) reaching up to 15.21%, with an fill factor (F.F.) of 72.71%, the open circuit voltage (Voc) of 0.57 V and the short circuit current (Jsc) of 36.07 mA. It could be found that the ZnO NWs on c-si photovoltaic devices are able to enhance solar cell efficiency the most in this investigation and it's also a helpful cost down research in silicon-based photovoltaic device fabrication.
Keywords: hdrothermal method, zinc oxide nanowires, solar cells, anti-reflection layer, fill factor
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ISSN: 2141-7016

Editor in Chief.

Prof. Gui Yun Tian
Professor of Sensor Technologies
School of Electrical, Electronic and Computer Engineering
University of Newcastle
United Kingdom



Copyright © Journal of Emerging Trends in Engineering and Applied Sciences 2010